Experimental Demonstration of Spectrally Efficient Frequency Division Multiplexing Transmissions at E-Band

This paper presents the design and the experimental demonstration of transmission of spectrally efficient frequency division multiplexing (SEFDM) signals, using a single 5-GHz channel, from 81 to 86 CHz in the E-hand frequency allocation. A purpose-built E-band SEFDM experimental demonstrator, consisting of transmitter and receiver GaAs microwave integrated circuits, along with a complete chain of digital signal processing is explained. Solutions are proposed to solve the channel and phase offset estimation and equalization issues, which arise from the well-known intercarrier interference between the SEFDM signal subcarriers. This paper shows the highest transmission rate of 12 Gb/s over a bandwidth varying between 2.67 to 4 CHz depending on the compression level of the SEFDM signals, which results in a spectral efficiency improvement by up to 50%, compared to the conventional orthogonal frequency division multiplexing modulation format

Optoelectronics Enabled Dense Patch Antenna Array for Future 5G Cellular Applications

The interconnection between densely-spaced antenna array elements to separated signal processors is a challenge in practical systems of future 5G applications. We present an interconnect concept based on optoelectronic link and a proof-of-concept experiment demonstrates successful 6-Gbps 64-QAM data transmission

Advanced Analog MMICs for mm-wave Communication and Remote Sensing in 0.15\ub5m mHEMT Technology

Multi-Gigabit per second wireless communication and atmospheric remote sensing for weather forecasts are new applications in the mm-wave frequency spectra. The High Electron Mobility Transistor is an excellent technology for high frequency mm-wave applications. Its low noise and linear performance makes a 0.15 μm GaAs metamorphic HEMT technology the basis for three MMIC circuit designs at mm-wave frequencies. The wireless data traffic has increased exponentially over the last years due to more network subscribers and their fast adaptation to use high datarate mobile services. In order for the operators to evolve and accommodate higher data-rates at affordable prices, new microwave bands for point-to-point communication is a cost effective solution for increasing the backhaul capacity and deliver higher data rates to the network users. Two mm wave mixers for wideband E-band communications, specially focusing on direct modulation and demodulation solutions have been designed, fabricated and characterized. Direct modulators requires added functions such as quadrature signals and LO-RF isolation to be compatible with e.g. QAM modulated signals. Complex high performance mixers with novel solutions have been designed to cope with cost, function and performance. Since cost is a driving factor, a novel differential branchline coupler has been introduced to reduce size while maintaining function and performance. The design rely on differential modes to accomplish this, something that is common in CMOS or BiCMOS due to the lossy substrate but not in GaAs. Utilizing the properties of common and differential modes, the LO-RF isolation has been further improved by the use of a mode selective filter. The design covers the whole E-band frequency span with measured 13 dBm OIP3, conversion loss of 11 dB, LO-RF isolation >30 dB and IF bandwidth of 5GHz. Remote mm and sub-mm wave sensing in Geostationary Earth Orbit has become an alternative solution for providing more accurate short term (nowcasting) weather predications. The advantage of being in geostationary orbit is the continuous coverage over a relatively large area. One of four frequency band of interest for this is 53GHz, where a complete single chip MMIC receiver with integrated low noise amplifier, frequency multiplier and image reject mixer was designed, manufactured and measured. The Noise Figure (NF) of the receiver was measured to be 4.6 dB, with a total power consumption of 140mW, conversion gain and image rejection measured to be 10 dB and >47 dB respectively. The NF is the lowest reported for a single chip receiver at 53GHz

Advanced Analog MMICs for mm-wave Communication and Remote Sensing in 0.15\ub5m mHEMT Technology

Multi-Gigabit per second wireless communication and atmospheric remote sensing for weather forecasts are new applications in the mm-wave frequency spectra. The High Electron Mobility Transistor is an excellent technology for high frequency mm-wave applications. Its low noise and linear performance makes a 0.15 μm GaAs metamorphic HEMT technology the basis for three MMIC circuit designs at mm-wave frequencies. The wireless data traffic has increased exponentially over the last years due to more network subscribers and their fast adaptation to use high datarate mobile services. In order for the operators to evolve and accommodate higher data-rates at affordable prices, new microwave bands for point-to-point communication is a cost effective solution for increasing the backhaul capacity and deliver higher data rates to the network users. Two mm wave mixers for wideband E-band communications, specially focusing on direct modulation and demodulation solutions have been designed, fabricated and characterized. Direct modulators requires added functions such as quadrature signals and LO-RF isolation to be compatible with e.g. QAM modulated signals. Complex high performance mixers with novel solutions have been designed to cope with cost, function and performance. Since cost is a driving factor, a novel differential branchline coupler has been introduced to reduce size while maintaining function and performance. The design rely on differential modes to accomplish this, something that is common in CMOS or BiCMOS due to the lossy substrate but not in GaAs. Utilizing the properties of common and differential modes, the LO-RF isolation has been further improved by the use of a mode selective filter. The design covers the whole E-band frequency span with measured 13 dBm OIP3, conversion loss of 11 dB, LO-RF isolation >30 dB and IF bandwidth of 5GHz. Remote mm and sub-mm wave sensing in Geostationary Earth Orbit has become an alternative solution for providing more accurate short term (nowcasting) weather predications. The advantage of being in geostationary orbit is the continuous coverage over a relatively large area. One of four frequency band of interest for this is 53GHz, where a complete single chip MMIC receiver with integrated low noise amplifier, frequency multiplier and image reject mixer was designed, manufactured and measured. The Noise Figure (NF) of the receiver was measured to be 4.6 dB, with a total power consumption of 140mW, conversion gain and image rejection measured to be 10 dB and >47 dB respectively. The NF is the lowest reported for a single chip receiver at 53GHz

On the implementation of device processing tolerances in FET Large Signal Models

Device technology is becoming quite mature and repeatable, but nevertheless, for various reasons, there are statistical variations in device parameters. These process variations will influence the accuracy of the designs and yield in production. The implementation of these variations in Large Signal Models is discussed in the paper

A third order analogue pre-distorter MMIC for E-band PA linearisation

In this paper we present the design, characterisation and non-linear control of an analogue pre-distortion (APD) MMIC at E-band. With non-linear behaviour models of the APD MMIC, we demonstrate the capability of controlling the quadrature gain and quadrature third order term. Finally, the APD is combined with a 1 W E-band PA, where we by cascading their measured responses show overall more linear behaviour towards saturated output power compared with the non-linearised 1 W PA. Simulated with 256 QAM modulated signals, the average output power of the linearised PA was 22.2 dBm in comparison to 18.7 dBm

A W-and G-band MMIC source using InP HBT technology

A frequency doubler/quadrupler for W-and G-band application is designed and fabricated utilizing an InP 250nm heterojunction bipolar transistor process. The multiplier is integrated with balanced V-band VCO. The VCO can be tuned between 57 to 61 GHz with average output power of 6 dBm and phase noise lower than 95 dBc/Hz at 1 MHz offset frequency. The circuit VCO plus multiplier can be used as a source with output power of 2dBm in 113-118 GHz bandwidth and 4dBm from 212 to 228 GHz

An E-Band(71-76, 81-86 GHz) Balanced Frequency Tripler for High-Speed Communications

An E-Band transistor-based balanced frequency tripler is implemented using a 0.15 mu m GaAs mHEMT process which can be integrated into a single-chip RF front-end. The balanced configuration with 90 degrees hybrids at the input and output improves the port impedance matching which is measured to be better than 15 dB at the input and 10 dB at the output over the frequencies of interest. The tripler has a conversion loss of 11.5 dB from 71 GHz to 76 GHz and 14 dB from 81 GHz to 86 GHz. The second and forth harmonics are suppressed by more than 30 dB and the fundamental frequency by 20 dB. The tripler can deliver -2 dBm output power